IRFD9110PBF, Trans MOSFET P-CH 100V 0.7A 4-Pin HVMDIP

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394 ₸

Мин. кол-во для заказа 460 шт.

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Номенклатурный номер: 8003311752

Артикул: IRFD9110PBF

Бренд / Производитель: VISHAY INTERTECHNOLOGY INC.

Semiconductor - Discrete > Transistors > FET - MOSFET

P-канал 100 В 700 мА (Ta) 1,3 Вт (Ta) сквозное отверстие 4-DIP, Hexdip, HVMDIP

Base Product Number	IRFD9110 ->
Current - Continuous Drain (Id) @ 25В°C	700mA (Ta)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	10V
ECCN	EAR99
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	8.7nC @ 10V
HTSUS	8541.29.0095
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Mounting Type	Through Hole
Operating Temperature	-55В°C ~ 175В°C (TJ)
Package	Tube
Package / Case	4-DIP (0.300"", 7.62mm)
Power Dissipation (Max)	1.3W (Ta)
Rds On (Max) @ Id, Vgs	1.2Ohm @ 420mA, 10V
RoHS Status	ROHS3 Compliant
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V @ 250ВµA
Brand	Vishay Semiconductors
Channel Mode	Enhancement
Configuration	Single Dual Drain
Factory Pack Quantity	2500
Fall Time	27 ns
Height	3.37 mm
Id - Continuous Drain Current	700 mA
Length	5 mm
Manufacturer	Vishay
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	Through Hole
Number of Channels	1 Channel
Packaging	Tube
Pd - Power Dissipation	1.3 W
Product	MOSFET Small Signal
Product Category	MOSFET
Rds On - Drain-Source Resistance	1.2 Ohms
Rise Time	27 ns
RoHS	Details
Transistor Polarity	P-Channel
Transistor Type	1 P-Channel
Typical Turn-Off Delay Time	15 ns
Typical Turn-On Delay Time	10 ns
Vds - Drain-Source Breakdown Voltage	-100 V
Vgs - Gate-Source Voltage	20 V
Width	6.29 mm