MJ15003G, Trans GP BJT NPN 140V 20A 250000mW 3-Pin(2+Tab) TO-3 Tray

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7 200 ₸

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от 37 шт. — 6 900 ₸

Добавить в корзину 26 шт. на сумму 187 200 ₸

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Номенклатурный номер: 8003268980

Артикул: MJ15003G

Бренд / Производитель: ON Semiconductor***

Semiconductor - Discrete > Transistors > BJT - General Purpose

Trans GP BJT NPN 140V 20A 250000 мВт 3-контактный лоток TO-3 (2 выступа)

Automotive	No
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Material	Si
Maximum Base Current (A)	5
Maximum Collector Base Voltage (V)	140
Maximum Collector-Emitter Saturation Voltage (V)	1 0.5A 5A
Maximum Collector-Emitter Voltage (V)	140
Maximum DC Collector Current (A)	20
Maximum Emitter Base Voltage (V)	5
Maximum Operating Temperature (°C)	200
Maximum Power Dissipation (mW)	250000
Maximum Transition Frequency (MHz)	2(Min)
Minimum DC Current Gain	25 5A 2V
Minimum Operating Temperature (°C)	-65
Mounting	Through Hole
Number of Elements per Chip	1
Operating Junction Temperature (°C)	-65 to 200
Packaging	Tray
Part Status	Active
PCB changed	2
Pin Count	3
PPAP	No
Product Category	Bipolar Power
Standard Package Name	TO-204-AA
Supplier Package	TO-3
Tab	Tab
Type	NPN
Brand	ON Semiconductor
Collector- Base Voltage VCBO	140 V
Collector- Emitter Voltage VCEO Max	140 V
Collector-Emitter Saturation Voltage	1 V
Continuous Collector Current	20 A
DC Collector/Base Gain Hfe Min	25
Emitter- Base Voltage VEBO	5 V
Factory Pack Quantity	100
Gain Bandwidth Product FT	2 MHz
Manufacturer	ON Semiconductor
Maximum DC Collector Current	20 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-65 C
Mounting Style	Through Hole
Package / Case	TO-204-2
Pd - Power Dissipation	250 W
Product Type	BJTs-Bipolar Transistors
Series	MJ15003
Subcategory	Transistors
Transistor Polarity	NPN
Height	8.51 mm(Max)
Length	39.37 mm
RoHS	Details
Width	26.67 mm(Max)