IRFB3607PBF, Trans MOSFET N-CH 75V 80A 3-Pin(3+Tab) TO-220AB Tube

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650 ₸

Мин. кол-во для заказа 270 шт.

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Добавить в корзину 270 шт. на сумму 175 500 ₸

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Номенклатурный номер: 8003191891

Артикул: IRFB3607PBF

Бренд / Производитель: INFINEON TECHNOLOGIES AG.

Semiconductor - Discrete > Transistors > FET - MOSFET

Trans MOSFET N-CH 75V 80A 3-контактный (3 выступа) TO-220AB Tube

Automotive	No
Channel Mode	Enhancement
Channel Type	N
Configuration	Single
ECCN (US)	EAR99
EU RoHS	Compliant with Exemption
Lead Shape	Through Hole
Maximum Continuous Drain Current (A)	80
Maximum Drain Source Resistance (MOhm)	9 10V
Maximum Drain Source Voltage (V)	75
Maximum Gate Source Voltage (V)	±20
Maximum Operating Temperature (°C)	175
Maximum Power Dissipation (mW)	140000
Minimum Operating Temperature (°C)	-55
Mounting	Through Hole
Number of Elements per Chip	1
Packaging	Tube
Part Status	Active
PCB changed	3
Pin Count	3
PPAP	No
Process Technology	HEXFET
Product Category	Power MOSFET
Standard Package Name	TO-220
Supplier Package	TO-220AB
Tab	Tab
Typical Fall Time (ns)	96
Typical Gate Charge @ 10V (nC)	56
Typical Gate Charge @ Vgs (nC)	56 10V
Typical Input Capacitance @ Vds (pF)	3070 50V
Typical Rise Time (ns)	110
Typical Turn-Off Delay Time (ns)	43
Typical Turn-On Delay Time (ns)	16
Current - Continuous Drain (Id) @ 25В°C	80A(Tc)
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On, Min Rds On)	10V
FET Feature	-
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	84nC 10V
Input Capacitance (Ciss) (Max) @ Vds	3070pF 50V
Manufacturer	Infineon Technologies
Mounting Type	Through Hole
Operating Temperature	-55В C ~ 175В C(TJ)
Package / Case	TO-220-3
Power Dissipation (Max)	140W(Tc)
Rds On (Max) @ Id, Vgs	9mOhm 46A, 10V
Series	HEXFETВ(r)
Supplier Device Package	TO-220AB
Technology	MOSFET(Metal Oxide)
Vgs (Max)	В±20V
Vgs(th) (Max) @ Id	4V 100ВuA