2N7002KW
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см. техническую документацию
см. техническую документацию
620 ₸
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от 5 шт. —
337 ₸
от 10 шт. —
245 ₸
Добавить в корзину 2 шт.
на сумму 1 240 ₸
Описание
Электроэлемент
MOSFET, N CH, 60V, 0.31A, SOT-323-3; Transistor Polarity:N Channel; Continuous Drain Current Id:310mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.1V; Power Dissipation Pd:300mW; Transistor Case Style:SOT-323; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 310mA(Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
| Manufacturer | ON Semiconductor |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | SC-70, SOT-323 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power Dissipation (Max) | 350mW(Ta) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| Series | - |
| Supplier Device Package | SC-70(SOT323) |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.1V @ 250ВµA |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Resistance | 4.8 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 350 mW |
| Minimum Gate Threshold Voltage | 1.1V |
| Minimum Operating Temperature | -55 °C |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 1.3mm |
| Вес, г | 0.05 |
